TSC MEMBER INSTITUTION(S):
New York University
National Science Foundation
SPIN TRANSFER TECHNOLOGIES
ABOUT THE COMPANY:
Spin Transfer Technologies (STT) has developed novel magnetoresistive random access memory (MRAM) devices for non-volatile computer memory. It belongs to a class of memory devices that utilize a quantum mechanical effect known as spin transfer to manipulate magnetic orientations over small distances. These memory devices can maintain data without power, similar to the memory utilized in flash drives, memory sticks, and smart cards.
However, a problem with flash drives and flash memory is the limited life of each memory cell write and its slow write speed, making them unsuitable for tasks requiring frequent read/write cycles. Additional disadvantages include high voltage requirements and limited scalability to smaller dimensions. STT’s patented technology provides a significant improvement over current spin transfer MRAM designs, which involve thermodynamic processes in the initiation of magnetic switching.
UNIVERSITY-BASED RESEARCH CONNECTION:
STT was established by New York University (NYU) and Allied Minds. The technology was originally developed from the mesoscopic magnetism research conducted in the laboratory of Andrew Kent, professor of physics at NYU and a Fellow of the American Physical Society.
ROLE OF FEDERAL RESEARCH FUNDING:
The National Science Foundation funded the work on MRAM computer memory technology.
Read The Full Report Here